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In a process of manufacturing a semiconductor device, a silicon oxide (SiO2) film is formed as a gate oxide film of a MOS (Metal Oxide Semiconductor) transistor or an insulating film of an element isolation region. However, as the semiconductor device has been highly integrated, the thickness of the gate oxide film becomes thinner. In case that the gate oxide film is formed of an oxide film having a thickness smaller than 3 nm, there is a problem that a leakage current flowing through the gate oxide film increases. For this reason, silicon nitride (SiN) having a high dielectric constant is used as the gate oxide film. However, the silicon nitride has a lower adhesion with respect to the silicon substrate. For this reason, after the silicon oxide film is formed as the gate oxide film, a thin film of silicon oxide (SiO2) is formed on the silicon nitride. The thin film of silicon oxide is then dry-etched until the silicon nitride is exposed, to form a trench portion having a sidewall made of silicon nitride. Subsequently, the silicon substrate is wet-etched in the trench portion using the thin film of silicon oxide, to form a trench portion having a sidewall made of the silicon oxide film. As a result, a structure in which the trench portion is filled with silicon nitride is obtained. In this way, the thin film of silicon oxide is formed on the silicon nitride. Therefore, the thin film of silicon oxide What's New in the RM Unreleased Icons? 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